NXP(恩智浦)
从毫瓦到千瓦的移动通信、汽车电子-选型
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| Parts | Marketing Deion | Status | P1dB (Typ) (dBm) | P3dB (Typ) (dBm) | P3dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) |
| A2G22S190-01SR3 | Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V | Active | 52.6 | 182 | 36.0 @ AVG | WCDMA | 16.5 @ 1805 | |
| A2G22S251-01SR3 | Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V | Active | 52 | 52.9 | 195 | 48.0 @ AVG | WCDMA | 17.7 @ 2170 |
| A2G26H281-04SR3 | Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V | Active | 54 | 251 | 50.0 @ AVG | WCDMA | 14.3 @ 2635 | |
| A2G35S160-01SR3 | Airfast RF Power GaN Transistor, 3400-3800 MHz, 32 W AVG., 48 V | Active | 51 | 52.1 | 162 | 32.0 @ AVG | WCDMA | 15.7 @ 3500 |
| A2G35S200-01SR3 | Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V | Active | 52.6 | 53.5 | 225 | 40.0 @ AVG | WCDMA | 16.1 @ 3500 |
| A2I08H040GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 728-960 MHz, 9 W AVG., 28 V | Active | 46.7 | 47.5 | 56 | 9.0 @ AVG | WCDMA | 30.7 @ 920 |
| A2I08H040NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 728-960 MHz, 9 W AVG., 28 V | Active | 46.7 | 47.5 | 56 | 9.0 @ AVG | WCDMA | 30.7 @ 920 |
| A2I09VD015GNR1 | Airfast RF Power LDMOS Wideb Integrated Power Amplifier, 575-960 MHz, 2 W Avg., 48 V | Active | 42.5 | 42.7 | 18.5 | 2.0 @ AVG | WCDMA | 32.8 @ 920 |
| A2I09VD015NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 575-960 MHz, 2 W Avg., 48 V | Active | 42.5 | 42.7 | 18.5 | 2.0 @ AVG | WCDMA | 32.8 @ 920 |
| A2I09VD030GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 575-960 MHz, 4 W AVG., 48 V | Active | 45.2 | 46.1 | 40.5 | 4.0 @ AVG | WCDMA | 34.3 @ 960 |
| A2I09VD030NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 575-960 MHz, 4 W AVG., 48 V | Active | 45.2 | 46.1 | 40.5 | 4.0 @ AVG | WCDMA | 34.3 @ 960 |
| A2I09VD050GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 575-960 MHz, 6.3 W Avg., 48 V | Active | 47.3 | 48.3 | 67.6 | 6.3 @ AVG | WCDMA | 36.5 @ 920 |
| A2I09VD050NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 575-960 MHz, 6.3 W Avg., 48 V | Active | 47.3 | 48.3 | 67.6 | 6.3 @ AVG | WCDMA | 36.5 @ 920 |
| A2I20D020GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifiers 1800-2200MHz, 2.5 W Avg., 28V | Active | 42 | 43.8 | 24 | 2.5 @ AVG | WCDMA | 31.0 @ 1800 |
| A2I20D020NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifiers 1800-2200MHz, 2.5 W Avg., 28V | Active | 42 | 43.8 | 24 | 2.5 @ AVG | WCDMA | 31.0 @ 1800 |
| A2I20D040GNR1 |   Airfast RF LDMOS Wideb Integrated Power Amplifier, 1400-2200 MHz, 5.0 W Avg., 28 V |
Active | 45.6 | 46.5 | 44.6 | 5.0 @ AVG | WCDMA | 32.7 @ 1800 |
| A2I20D040NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1400-2200 MHz, 5.0 W Avg., 28 V | Active | 45.6 | 46.5 | 44.6 | 5.0 @ AVG | WCDMA | 32.7 @ 1800 |
| A2I20H060GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V | Active | 48 | 48.7 | 74 | 12.0 @ AVG | WCDMA | 28.4 @ 1840 |
| A2I20H060NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V | Active | 48 | 48.7 | 74 | 12.0 @ AVG | WCDMA | 28.4 @ 1840 |
| A2I20H080GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V | Active | 48.5 | 49.5 | 90 | 13.5 @ AVG | WCDMA | 28.2 @ 1840 |
| A2I20H080NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V | Active | 48.5 | 49.5 | 90 | 13.5 @ AVG | WCDMA | 28.2 @ 1840 |
| A2I22D050GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 2000-2200 MHz, 5.3 W Avg., 28 V | Active | 46.5 | 47.5 | 56 | 5.3 @ AVG | WCDMA | 32.6 @ 2170 |
| A2I22D050NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 2000-2200 MHz, 5.3 W Avg., 28 V | Active | 46.5 | 47.5 | 56 | 5.3 @ AVG | WCDMA | 32.6 @ 2170 |
| A2I25D012GNR1 | Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V | Active | 41.9 | 43.8 | 24 | 2.2 @ AVG | WCDMA | 33.2 @ 2690 |
| A2I25D012NR1 | Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V | Active | 41.9 | 43.8 | 24 | 2.2 @ AVG | WCDMA | 33.2 @ 2690 |
| A2I25D025GNR1 | Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V | Active | 43.8 | 45.5 | 35.5 | 3.2 @ AVG | WCDMA | 32.5 @ 2690 |
| A2I25D025NR1 | Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V | Active | 43.8 | 45.5 | 35.5 | 3.2 @ AVG | WCDMA | 32.5 @ 2690 |
| A2I25H060GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 2300-2690 MHz, 10.5 W AVG., 28 V | Active | 47.2 | 47.6 | 57 | 10.5 @ AVG | WCDMA | 27.5 @ 2590 |
| A2I25H060NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 2300-2690 MHz, 10.5 W AVG., 28 V | Active | 47.2 | 47.6 | 57 | 10.5 @ AVG | WCDMA | 27.5 @ 2590 |
| A2I35H060GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V | Active | 46.8 | 48.1 | 65 | 10.0 @ AVG | WCDMA | 24.0 @ 3500 |
| A2I35H060NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V | Active | 46.8 | 48.1 | 65 | 10.0 @ AVG | WCDMA | 24.0 @ 3500 |
| PA2I35H060NR9 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V | No Longer Manufactured | 46.8 | 48.1 | 65 | 10.0 @ AVG | WCDMA | 24.0 @ 3500 |
| A2T07H310-24SR6 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 47 W Avg., 28 V | Active | 51 | 55.2 | 330 | 47.0 @ AVG | WCDMA | 18.9 @ 865 |
| A2T08VD020NT1 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V | Active | 42.7 | 43.4 | 21.9 | 2.0 @ AVG | WCDMA | 19.1 @ 960 |
| A2T09D400-23NR6 | AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V | Active | 56 | 57.3 | 540 | 93.0 @ AVG | WCDMA | 17.9 @ 836 |
| A2T09VD250NR1 | Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V | Active | 53.8 | 55.1 | 326 | 65.0 @ AVG | WCDMA | 22.5 @ 920 |
| A2T09VD300NR1 | Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V | Active | 54 | 56 | 398 | 79.0 @ AVG | WCDMA | 21.5 @ 920 |
| A2T14H450-23NR6 | Airfast RF Power LDMOS Transistor, 1452-1511 MHz, 93 W Avg., 31 V | Active | 57.5 | 560 | 93.0 @ AVG | WCDMA | 18.8 @ 1452 | |
| A2T18H100-25SR3 | Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V | Active | 48.6 | 50.5 | 112 | 18.0 @ AVG | WCDMA | 18.1 @ 1805 |
| A2T18H160-24SR3 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V | Active | 51 | 52.6 | 182 | 28.0 @ AVG | WCDMA | 17.9 @ 1805 |
| A2T18H410-24SR6 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V | Active | 55 | 56.6 | 457 | 71.0 @ AVG | WCDMA | 17.4 @ 1805 |
| A2T18S165-12SR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 48 W Avg., 28 V | Active | 51.7 | 38.0 @ AVG | WCDMA | 18.0 @ 1840 | ||
| A2T18S166W12SR3 | Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 38 W Avg., 28 V | Active | 52 | 38.0 @ AVG | WCDMA | 18.1 @ 1840 | ||
| A2T18S260-12SR3 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg., 28 V | Active | 54.1 | 55.1 | 323 | 50.0 @ Avg. | WCDMA | 18.9 @ 1805 |
| A2T18S262W12NR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V | Active | 53.6 | 56.0 @ AVG | WCDMA | 19.3 @ 1880 | ||
| A2T20H160W04NR3 | Airfast RF Power LDMOS Transistor 1880-2025 MHz, 28 W Avg., 28 V | Active | 49.5 | 53 | 200 | 28.0 @ AVG | WCDMA | 17.0 @ 1960 |
| A2T21H100-25SR3 | Airfast RF Power LDMOS Transistor 2110-2170 MHz, 18 W Avg., 28 V | Active | 48.8 | 50.5 | 112 | 18.0 @ AVG | WCDMA | 17.4 @ 2170 |
| A2T21H140-24SR3 | Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V | Active | 52.3 | 169 | 36.0 @ AVG | WCDMA | 17.4 @ 2110 | |
| A2T21H141W24SR3 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 36 W Avg., 28 V | Active | 52 | 158 | 36.0 @ AVG | WCDMA | 17.2 @ 2110 | |
| A2T21H360-23NR6 | Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V | Active | 53.6 | 55.7 | 373 | 63.0 @ AVG | WCDMA | 16.8 @ 2140 |
| A2T21H360-24SR6 | Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | Active | 54.8 | 56 | 400 | 63.0 @ AVG | WCDMA | 16.2 @ 2140 |
| A2T21H410-24SR6 | Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V | Active | 55 | 56.5 | 447 | 72.0 @ AVG | WCDMA | 15.6 @ 2170 |
| A2T21S160-12SR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 48 W Avg., 28 V | Active | 51.5 | 38.0 @ AVG | WCDMA | 18.4 @ 2170 | ||
| A2T21S161W12SR3 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 38 W Avg., 28 V | Active | 52 | 38.0 @ AVG | WCDMA | 19.1 @ 2170 | ||
| A2T21S260-12SR3 | Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V | Active | 53.2 | 65.0 @ AVG | WCDMA | 18.7 @ 2170 | ||
| A2T21S260W12NR3 | Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V | Active | 53.4 | 56.0 @ AVG | WCDMA | 17.9 @ 2170 | ||
| A2T23H160-24SR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V | Active | 50.8 | 52.5 | 178 | 28.0 @ AVG | WCDMA | 17.7 @ 2300 |
| A2T23H200W23SR6 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V | Active | 54.6 | 288 | 51.0 @ AVG | WCDMA | 15.5 @ 2300 | |
| A2T23H300-24SR6 | AIRFAST RF POWER LDMOS TRANSISTOR, 2300-2400 MHz, 69 W Avg., 28 V | Active | 54.4 | 56.1 | 410 | 66.0 @ AVG | WCDMA | 14.9 @ 2300 |
| A2T26H160-24SR3 | AIRFAST RF POWER LDMOS TRANSISTOR, 2496 - 2690 MHz, 28 W AVG, 28 V | Active | 51.4 | 52.5 | 178 | 28.0 @ AVG | WCDMA | 16.4 @ 2690 |
| A2T26H165-24SR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V | Active | 51.5 | 52.8 | 191 | 32.0 @ AVG | WCDMA | 14.7 @ 2496 |
| A2T26H300-24SR6 | AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V | Active | 53.2 | 55.6 | 363 | 60.0 @ AVG | WCDMA | 14.5 @ 2496 |
| A2T27S007NT1 | Airfast RF Power LDMOS Transistor, 400-2700 MHz, 28.8 dBm Avg., 28 V | Active | 38.5 | 0.8 @ AVG | WCDMA | 18.9 @ 2170 | ||
| A2T27S020GNR1 | Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V | Active | 43 | 2.5 @ AVG | WCDMA | 21.1 @ 1840 | ||
| A2T27S020NR1 | Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V | Active | 43 | 2.5 @ AVG | WCDMA | 21.1 @ 1840 | ||
| A2V07H400-04NR3 | Airfast RF Power LDMOS Transistor, 450-851 MHz, 107 W Avg., 48 V | Active | 57.3 | 537 | 107.0 @ AVG | WCDMA | 19.9 @ 623 | |
| A2V07H525-04NR6 | Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V | Active | 57.8 | 602 | 120.0 @ AVG | WCDMA | 17.5 @ 623 | |
| A2V09H300-04NR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V | Active | 53.5 | 56 | 400 | 79.0 @ AVG | WCDMA | 19.7 @ 940 |
| A2V09H400-04NR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V | Active | 57.5 | 562 | 107.0 @ AVG | WCDMA | 18.0 @ 780 | |
| A2V09H400-04SR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 102 W Avg., 48 V | Active | 57.1 | 512 | 102.0 @ AVG | WCDMA | 18.7 @ 920 | |
| A2V09H525-04NR6 | Airfast RF LDMOS Wideb Integrated power amplifier, 575-960 MHz, 525 W, 48 V | Active | 58.8 | 759 | 120.0 @ AVG | WCDMA | 18.9 @ 940 | |
| A3G18D510-04SR3 | Airfast RF Power GaN Transistor, 1805-2200 MHz, 56 W Avg., 48 V | Active | 55.5 | 355 | 56.0 @ AVG | WCDMA | 16.0 @ 1805 | |
| A3G18H500-04SR3 | Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V | Active | 57.3 | 537 | 107.0 @ AVG | WCDMA | 15.4 @ 1840 | |
| A3G20S250-01SR3 | Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V | Active | 53.8 | 240 | 45.0 @ AVG | WCDMA | 18.2 @ 2170 | |
| A3G20S350-01SR3 | Airfast RF Power GaN Transistor, 2110-2170 MHz, 59 W Avg., 48 V | Active | 56.1 | 410 | 59.0 @ AVG | WCDMA | 18.1 @ 2170 | |
| A3G22H400-04SR3 | Airfast RF Power GaN Transistor, 1805-2200 MHz, 79 W Avg., 48 V | Active | 56 | 400 | 79.0 @ AVG | WCDMA | 15.4 @ 2140 | |
| A3G26D055NT4 | Airfast RF Power GaN Transistor, 100-2690 MHz, 8 W Avg., 48 V | Active | 47.4 | 55 | 8.0 @ Avg | WCDMA | 18.0 @ 2675 | |
| A3G26H200W17SR3 | Airfast RF Power GaN Transistor, 2496-2690 MHz, 34 W Avg., 48 V | Active | 52.5 | 178 | 34.0 @ AVG | WCDMA | 14.2 @ 2690 | |
| A3G26H350W17SR3 | Airfast RF Power GaN Transistor, 2496-2690 MHz, 59 W Avg., 48 V | Active | 56.2 | 420 | 59.0 @ Avg | WCDMA | 13.3 @ 2690 | |
| A3G26H501W17SR3 | Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V | Active | 57 | 500 | 56.0 @ AVG | WCDMA | 14.5 @ 2590 | |
| A3G26H502W17SR3 | Airfast RF Power GaN Transistor, 2496-2690 MHz, 80 W Avg., 48 V | Active | 57 | 500 | 80.0 @ Avg | WCDMA | 13.2 @ 2690 | |
| A3G35H100-04SR3 | Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V | Active | 50 | 100 | 14.0 @ AVG | WCDMA | 14.0 @ 3600 | |
| A3I20X050GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V | Active | 48 | 63 | 6.3 @ AVG | WCDMA | 28.7 @ 1840 | |
| A3I20X050NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V | Active | 48 | 63 | 6.3 @ AVG | WCDMA | 28.7 @ 1840 | |
| A3I25X050GNR1 | Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V | Active | ||||||
| A3I25X050NR1 | Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V | Active | 47.4 | 55 | 5.6 @ AVG | WCDMA | 28.8 @ 2590 | |
| A3I35D012WGNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V | Active | 42.7 | 18.6 | 1.8 @ AVG | WCDMA | 27.8 @ 3800 | |
| A3I35D012WNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V | Active | 42.7 | 18.6 | 1.8 @ AVG | WCDMA | 27.8 @ 3800 | |
| A3I35D025WGNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V | Active | 45.4 | 35 | 3.4 @ AVG | WCDMA | 28.9 @ 3600 | |
| A3I35D025WNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V | Active | 45.4 | 35 | 3.4 @ AVG | WCDMA | 28.9 @ 3600 | |
| A3M35TL039T2 | Airfast Power Amplifier Module, 3400-3650 MHz, 28 dB, 7 W Avg. | Active | 47.2 | 52.5 | 7.0 @ Avg | LTE | 28.3 @ 3500 | |
| A3M37TL039T2 | Airfast Power Amplifier Module, 3600-3800 MHz, 28 dB, 7 W Avg. | Active | 47.2 | 52.5 | 7.0 @ Avg | LTE | 28.2 @ 3700 | |
| A3M39TL039T2 | Airfast Power Amplifier Module, 3700-3980 MHz, 27 dB, 8 W Avg. | Active | 47 | 50.1 | 8.0 @ Avg | LTE | 27.1 @ 3800 | |
| A3T09S100NR1 | Airfast RF Power LDMOS Transistor, 100 W CW over 136 to 941 MHz, 32 V | Active | 50 | 90.0 @ CW | CW | 22.8 @ 880 | ||
| A3T18H360W23SR6 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V | Active | 54.7 | 375 | 63.0 @ AVG | WCDMA | 16.6 @ 1880 | |
| A3T18H400W23SR6 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V | Active | 56.3 | 427 | 71.0 @ AVG | WCDMA | 16.8 @ 1880 | |
| A3T18H408W24SR3 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 56 W Avg., 30 V | Active | 55.4 | 350 | 56.0 @ AVG | WCDMA | 15.2 @ 1880 | |
| A3T18H455W23SR6 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V | Active | 58.4 | 685 | 87.0 @ AVG | WCDMA | 17.4 @ 1840 | |
| A3T19H455W23SR6 | Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V | Active | 57.3 | 541 | 81.0 @ AVG | WCDMA | 16.4 @ 1990 | |
| A3T21H360W23SR6 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V | Active | 55.4 | 348 | 56.0 @ AVG | WCDMA | 16.4 @ 2110 | |
| A3T21H400W23SR6 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V | Active | 56.4 | 436 | 71.0 @ AVG | WCDMA | 15.7 @ 2110 | |
| A3T21H450W23SR6 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V | Active | 57 | 501 | 87.0 @ AVG | WCDMA | 15.7 @ 2155 | |
| A3T21H455W23SR6 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V | Active | 57 | 501 | 87.0 @ AVG | WCDMA | 15.0 @ 2200 | |
| A3T21H456W23SR6 | Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V | Active | 57.5 | 562 | 87.0 @ AVG | WCDMA | 14.8 @ 2110 | |
| A3T23H300W23SR6 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V | Active | 56.1 | 410 | 63.0 @ AVG | WCDMA | 15.6 @ 2300 | |
| A3T23H450W23SR6 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V | Active | 57.5 | 562 | 87.0 @ AVG | WCDMA | 14.7 @ 2300 | |
| A3V07H600-42NR6 | Airfast RF Power LDMOS Transistor, 616-870 MHz, 112 W Avg., 48 V | Active | 59 | 112.0 @ AVG | WCDMA | 16.9 @ 717 | ||
| A3V09H521-24SR6 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V | Active | 58.2 | 661 | 107.0 @ AVG | WCDMA | 18.5 @ 960 | |
| A3V26S004NT6 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 26 dBm Avg, 48 V | Active | 34.9 | 3.1 | 0.22 @ Avg | WCDMA | 23.0 @ 2595 | |
| AFIC10275GNR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V | Active | 54 | 275 | 250.0 @ Peak | Pulse | 32.6 @ 978 | |
| AFIC10275NR1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V | Active | 54 | 275 | 250.0 @ Peak | Pulse | 32.6 @ 978 | |
| AFIC10275NR5 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V | Active | 54 | 275 | 250.0 @ Peak | Pulse | 32.6 @ 978 | |
| AFIC31025GNR1 | Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V | Active | 44 | 25.0 @ Peak | Pulse | 22.0 @ 2700 | ||
| AFIC31025NR1 | Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V | Active | 44 | 25.0 @ Peak | Pulse | 22.0 @ 2700 | ||
| AFIC901NT1 | Airfast RF LDMOS Wideb Integrated Power Amplifier, 1.8-1000 MHz, 30 dBm, 7.5 V | Active | 30 | 1.0 @ CW | CW | 31.2 @ 520 | ||
| AFLP5G25641T6 | Airfast Pre-Driver Module, 2300-2700 MHz, 32 dB, 29 dBm | Active | 25, 29 | 32.0 @ 2500 | ||||
| AFLP5G35645T6 | Airfast Pre-Driver Module, 3400-3800 MHz, 32 dB, 29 dBm | Active | 25, 29 | 32.0 @ 3600 | ||||
| AFM906NT1 | Wideb Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V | Active | 37.8 | 6.0 @ CW | CW | 20.3 @ 520 | ||
| AFM907NT1 | Wideb Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V | Active | 39 | 8.0 @ CW | CW | 20.7 @ 520 | ||
| AFSC5G23D37T2 | Airfast Power Amplifier Module, 2300-2400 MHz, 27 dB, 5 W Avg. | Active | 44.5 | 28.9 | 5.0 @ AVG | LTE | 27.0 @ 2355 | |
| AFSC5G26D37T2 | Airfast Power Amplifier Module, 2496-2690 MHz, 27 dB, 5 W Avg. | Active | 45.7 | 37.2 | 5.0 @ AVG | LTE | 27.2 @ 2600 | |
| AFSC5G26E38T2 | Airfast Power Amplifier Module, 2496-2690 MHz, 35 dB, 6 W Avg. | Active | 45.8 | 38 | 6.0 @ Avg | LTE | 35.4 @ 2600 | |
| AFSC5G26E39T2 | Airfast Power Amplifier Module, 2496-2690 MHz, 30 dB, 8 W Avg. | Active | 47.1 | 51.3 | 8.0 @ Avg | LTE | 29.6 @ 2600 | |
| AFSC5G26F38T2 | Airfast Power Amplifier Module, 2496-2690 MHz, 35 dB, 7 W Avg. | Active | 46.8 | 47.9 | 7.0 @ Avg | LTE | 35.1 @ 2600 | |
| AFSC5G35D35T2 | Airfast Power Amplifier Module, 3400-3600 MHz, 26 dB, 3 W Avg. | Active | 43.2 | 20.9 | 3.0 @ AVG | LTE | 24.9 @ 3500 | |
| AFSC5G35D37T2 | Airfast Power Amplifier Module, 3400-3600 MHz, 29 dB, 5 W Avg. | Active | 45.6 | 36.3 | 5.0 @ AVG | LTE | 29.3 @ 3500 | |
| AFSC5G35E38T2 | Airfast Power Amplifier Module, 3400-3700 MHz, 30 dB, 7 W Avg. | Active | 46 | 39.8 | 7.0 @ Avg | LTE | 30.8 @ 3500 | |
| AFSC5G37D37T2 | Airfast Power Amplifier Module, 3600-3800 MHz, 29 dB, 5.7 W Avg. | Active | 44.7 | 29.5 | 5.7 @ AVG | LTE | 29.7 @ 3700 | |
| AFSC5G37E38T2 | Airfast Power Amplifier Module, 3600-3800 MHz, 28 dB, 6.3 W Avg. | Active | 45.5 | 35.5 | 6.3 @ Avg | LTE | 28.3 @ 3700 | |
| AFSC5G40E38T2 | Airfast Power Amplifier Module, 3700-4000 MHz, 27 dB, 6.3 W Avg. | Active | 45.5 | 35.5 | 6.3 @ Avg | LTE | 27.5 @ 3900 | |
| AFT05MP075GNR1 | Airfast Broadb RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V | Active | 48.5 | 70.0 @ CW | CW | 18.5 @ 520 | ||
| AFT05MP075NR1 | Airfast Broadb RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V | Active | 48.5 | 70.0 @ CW | CW | 18.5 @ 520 | ||
| AFT05MS004NT1 | Wideb RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V | Active | 36 | 4.9 @ CW | CW | 20.9 @ 520 | ||
| AFT05MS031GNR1 | Airfast Wideb RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V | Active | 44.9 | 31.0 @ 1-Tone | 1-TONE | 17.7 @ 520 | ||
| AFT05MS031NR1 | Airfast Wideb RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V | Active | 44.9 | 31.0 @ 1-Tone | 1-TONE | 17.7 @ 520 | ||
| AFT09H310-03SR6 | Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V | Active | 52.6 | 55.9 | 390 | 56.0 @ AVG | WCDMA | 17.9 @ 920 |
| AFT09H310-04GSR6 | Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V | Active | 52.6 | 55.9 | 390 | 56.0 @ AVG | WCDMA | 17.9 @ 920 |
| AFT09MP055GNR1 | Airfast Broadb RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V | Active | 47.6 | 57.0 @ 1-Tone | 1-TONE | 17.5 @ 870 | ||
| AFT09MP055NR1 | Airfast Broadb RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V | Active | 47.6 | 57.0 @ 1-Tone | 1-TONE | 17.5 @ 870 | ||
| AFT09MS007NT1 | Wideb RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V | Active | 38.6 | 7.3 @ 1-Tone | 1-TONE | 15.2 @ 870 | ||
| AFT09MS015NT1 | Wideb RF Power LDMOS Transistor, 136-941 MHz, 16 W, 12.5 V | Active | 42 | 16.0 @ CW | CW | 17.2 @ 870 | ||
| AFT09MS031GNR1 | Airfast Wideb RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V | Active | 44.9 | 31.0 @ 1-Tone | 1-TONE | 17.2 @ 870 | ||
| AFT09MS031NR1 | Airfast Wideb RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V | Active | 44.9 | 31.0 @ 1-Tone | 1-TONE | 17.2 @ 870 | ||
| AFT09S282NR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V | Active | 54.5 | 80.0 @ AVG | WCDMA | 20.0 @ 960 | ||
| AFT18H356-24SR6 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V | Active | 56 | 56.8 | 480 | 63.0 @ AVG | WCDMA | 15.0 @ 1880 |
| AFT18H357-24SR6 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 63 W Avg., 28 V | Active | 53.4 | 55.1 | 320 | 63.0 @ AVG | WCDMA | 17.3 @ 1805 |
| AFT18P350-4S2LR6 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V | Active | 55 | 56 | 394 | 63.0 @ AVG | WCDMA | 16.1 @ 1805 |
| AFT18S230-12NR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 50 W Avg., 28 V | Active | 53.1 | 50.0 @ AVG | WCDMA | 17.6 @ 1880 | ||
| AFT18S230SR3 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V | Active | 53.2 | 50.0 @ AVG | WCDMA | 19.0 @ 1880 | ||
| AFT18S230SR5 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V | Active | 53.2 | 50.0 @ AVG | WCDMA | 19.0 @ 1880 | ||
| AFT18S290-13SR3 | Airfast RF Power LDMOS Transistor, 1805-1995 MHz 63 W Avg., 28 V | Active | 54.2 | 63.0 @ AVG | WCDMA | 18.2 @ 1960 | ||
| AFT20P060-4GNR3 | Airfast RF Power LDMOS Transistor, 1805-2170 MHz 6.3 W Avg., 28 V | Active | 47.8 | 6.3 @ AVG | WCDMA | 18.9 @ 2170 | ||
| AFT20P060-4NR3 | Airfast RF Power LDMOS Transistor, 1805-2170 MHz 6.3 W Avg., 28 V | Active | 47.8 | 6.3 @ AVG | WCDMA | 18.9 @ 2170 | ||
| AFT20P140-4WNR3 | Airfast RF Power LDMOS Transistor, 1880-2025 MHz, 24 W Avg., 28 V | Active | 51.1 | 52.3 | 170 | 24.0 @ AVG | WCDMA | 17.6 @ 2025 |
| AFT20S015GNR1 | Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V | Active | 42.1 | 1.5 @ AVG | WCDMA | 17.6 @ 2170 | ||
| AFT20S015NR1 | Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V | Active | 42.1 | 1.5 @ AVG | WCDMA | 17.6 @ 2170 | ||
| AFT21S230-12SR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V | Active | 52.6 | 50.0 @ AVG | WCDMA | 16.7 @ 2110 | ||
| AFT21S232SR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz 50 W Avg., 28 V | Active | 52.6 | 50.0 @ AVG | WCDMA | 16.7 @ 2110 | ||
| AFT21S232SR5 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz 50 W Avg., 28 V | Not Recommended for New Designs | 52.6 | 50.0 @ AVG | WCDMA | 16.7 @ 2110 | ||
| AFT21S240-12SR3 | Airfast RF Power LDMOS Transistor 2110-2170 MHz, 55 W Avg., 28 V | Active | 53.6 | 55.0 @ AVG | WCDMA | 20.4 @ 2170 | ||
| AFT23H160-25SR3 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 32 W Avg., 28 V | Active | 50.6 | 53.1 | 203 | 32.0 @ AVG | WCDMA | 16.7 @ 2300 |
| AFT23H200-4S2LR6 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V | Active | 53.2 | 54.6 | 290 | 45.0 @ AVG | WCDMA | 15.3 @ 2300 |
| AFT26H160-4S4R3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V | Active | 50 | 53 | 200 | 32.0 @ AVG | WCDMA | 14.9 @ 2496 |
| AFT26H250-24SR6 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V | Active | 53.6 | 55.1 | 320 | 50.0 @ AVG | WCDMA | 14.1 @ 2496 |
| AFT27S006NT1 | Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V | Active | 37.8 | 0.76 @ AVG | WCDMA | 22.5 @ 2170 | ||
| AFT27S010NT1 | Airfast RF Power LDMOS Transistor, 728-3600 MHz, 1.26 W Avg., 28 V | Active | 40 | 1.26 @ AVG | WCDMA | 21.7 @ 2170 | ||
| AFT27S012NT1 | Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V | Active | 41.1 | 1.26 @ AVG | WCDMA | 22.8 @ 2170 | ||
| AFT31150NR5 | Airfast RF Power LDMOS Transistor, 150 W Pulse over 2700-3100 MHz, 32 V | Active | 51.8 | 150.0 @ Peak | Pulse | 17.0 @ 3100 | ||
| AFV09P350-04GNR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V | Active | 53 | 57 | 500 | 100.0 @ AVG | WCDMA | 19.5 @ 920 |
| AFV09P350-04NR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V | Active | 53 | 57 | 500 | 100.0 @ AVG | WCDMA | 19.5 @ 920 |
| AFV10700GSR5 | Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V | Active | 58.5 | 700.0 @ Peak | Pulse | 19.2 @ 1030 | ||
| AFV10700HR5 | Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V | Active | 58.5 | 700.0 @ Peak | Pulse | 19.2 @ 1030 | ||
| AFV10700HSR5 | Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V | Active | 58.5 | 700.0 @ Peak | Pulse | 19.2 @ 1030 | ||
| AFV121KGSR5 | Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V | Active | 60 | 1600 | 1000.0 @ Peak | Pulse | 17.4 @ 1090 | |
| AFV121KHR5 | Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V | Active | 60 | 1600 | 1000.0 @ Peak | Pulse | 17.4 @ 1090 | |
| AFV121KHSR5 | Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V | Active | 60 | 1600 | 1000.0 @ Peak | Pulse | 17.4 @ 1090 | |
| AFV141KGSR5 | Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V | Active | 60 | 1000.0 @ Peak | Pulse | 17.7 @ 1400 | ||
| AFV141KHR5 | Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V | Active | 60 | 1000.0 @ Peak | Pulse | 17.7 @ 1400 | ||
| AFV141KHSR5 | Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V | Active | 60 | 1000.0 @ Peak | Pulse | 17.7 @ 1400 | ||
| MD7IC1812GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V | Active | 40.8 | 41.1 | 13 | 1.3 @ AVG | WCDMA | 31.5 @ 1880 |
| MD7IC1812NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V | Active | 40.8 | 41.1 | 13 | 1.3 @ AVG | WCDMA | 31.5 @ 1880 |
| MD7IC2050GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V | Active | 47.8 | 48.7 | 74 | 10.0 @ AVG | WCDMA | 30.5 @ 2025 |
| MD7IC2050NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V | Active | 47.8 | 48.7 | 74 | 10.0 @ AVG | WCDMA | 30.5 @ 2025 |
| MD7IC2250GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V | Active | 47.3 | 5.3 @ AVG | WCDMA | 31.1 @ 2170 | ||
| MD7IC2251GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 12 W Avg., 28 V | Active | 46 | 47.6 | 58 | 12.0 @ AVG | WCDMA | 29.0 @ 2140 |
| MD7IC2755NR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 10 W Avg., 28 V | Active | 44.8 | 10.0 @ AVG | WiMAX | 25.0 @ 2700 | ||
| MD8IC925GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V | Active | 44.1 | 44.9 | 31 | 2.5 @ AVG | WCDMA | 36.2 @ 940 |
| MD8IC925NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V | Active | 44.1 | 44.9 | 31 | 2.5 @ AVG | WCDMA | 36.2 @ 940 |
| MD8IC970GNR1 | RF LDMOS Wideb Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V | Active | 49 | 35.0 @ AVG | 2-TONE | 32.6 @ 940 | ||
| MD8IC970NR1 | RF LDMOS Wideb Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V | Active | 49 | 35.0 @ AVG | 2-TONE | 32.6 @ 940 | ||
| MHT1001HR5 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 190 W CW, 28 V | Active | 52.8 | 300 | 190.0 @ CW | 1-TONE | 13.2 @ 2450 | |
| MHT1002GNR3 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 915 MHz, 350 W, 48 V | Active | 55.9 | 443 | 350.0 @ CW | CW | 20.7 @ 915 | |
| MHT1006NT1 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 728-2700 MHz, 10 W CW, 28 V | Active | 40 | 14 | 10.0 @ CW | 19.8 @ 2400 | ||
| MHT1008NT1 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V | Active | 41 | 16 | 12.5 @ CW | CW | 18.6 @ 2450 | |
| MHT1803A | RF Power LDMOS Transistor for Consumer Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V | Active | 300.0 @ CW | 28.2 @ 41 | ||||
| MHT2001NR1 | RF LDMOS Integrated Power Amplifier for Consumer Commercial Cooking, 902-928 MHz, 175 W CW, 50 V | Active | 52 | 181 | 175.0 @ CW | CW | 33.8 @ 928 | |
| MHT2012NT1 | RF LDMOS Integrated Power Amplifier, 2450 MHz, 12.5 W CW, 28 V | Active | 41 | 12.5 @ CW | CW | 30.0 @ 2450 | ||
| MHTG1200HSR3 | RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | Active | 54.8 | CW | 15.2 @ 2450 | |||
| MMRF1004GNR1 | GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | Active | 40 | 14 | 1.0 @ AVG | WCDMA | 15.5 @ 2170 | |
| MMRF1004NR1 | GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | Active | 40 | 14 | 1.0 @ AVG | WCDMA | 15.5 @ 2170 | |
| MMRF1006HR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | Active | 60 | 1200 | 1000.0 @ Peak | Pulse | 20.0 @ 450 | |
| MMRF1006HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | Active | 60 | 1200 | 1000.0 @ Peak | Pulse | 20.0 @ 450 | |
| MMRF1007HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V | Active | 60 | 1200 | 1000.0 @ Peak | Pulse | 20.0 @ 1030 | |
| MMRF1008GHR5 | Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V | Active | 54.4 | 338 | 275.0 @ Peak | Pulse | 20.3 @ 1030 | |
| MMRF1008HR5 | Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V | Active | 54.4 | 338 | 275.0 @ Peak | Pulse | 20.3 @ 1030 | |
| MMRF1009HR5 | Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | Active | 57 | 500.0 @ Peak | Pulse | 19.7 @ 1030 | ||
| MMRF1009HSR5 | Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | Active | 57 | 500.0 @ Peak | Pulse | 19.7 @ 1030 | ||
| MMRF1011HSR5 | Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V | Active | 55.2 | 339 | 330.0 @ Peak | Pulse | 18.0 @ 1400 | |
| MMRF1013HR5 | Lateral N-Channel Broadb RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V | Active | 55.1 | 328 | 320.0 @ Peak | Pulse | 13.3 @ 2900 | |
| MMRF1013HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V | Active | 55.1 | 328 | 320.0 @ Peak | Pulse | 13.3 @ 2900 | |
| MMRF1014NT1 | LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V | Active | 36 | 4.0 @ PEP | 2-TONE | 18.0 @ 1960 | ||
| MMRF1015GNR1 | Lateral N-Channel Broadb RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | Active | 40 | 10.0 @ PEP | 2-TONE | 18.0 @ 960 | ||
| MMRF1015NR1 | Lateral N-Channel Broadb RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | Active | 40 | 10.0 @ PEP | 2-TONE | 18.0 @ 960 | ||
| MMRF1020-04GNR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V | Active | 53 | 500 | 100.0 @ AVG | WCDMA | 19.5 @ 920 | |
| MMRF1020-04NR3 | Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V | Active | 53 | 500 | 100.0 @ AVG | WCDMA | 19.5 @ 920 | |
| MMRF1024HSR5 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V | Active | 53.6 | 320 | 50.0 @ AVG | WCDMA | 14.1 @ 2496 | |
| MMRF1050HR6 | Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V | Active | 60.2 | 1050.0 @ Peak | Pulse | 21.3 @ 950 | ||
| MMRF1305HSR5 | Broadb RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | Active | 50 | 100.0 @ CW | 1-TONE | 27.2 @ 512 | ||
| MMRF1310HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | Active | 54.8 | 300.0 @ CW | 1-TONE | 25.0 @ 130 | ||
| MMRF1312GSR5 | RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V | Active | 60 | 1200 | 1200.0 @ Peak | Pulse | 17.3 @ 960 | |
| MMRF1312HR5 | RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V | Active | 60 | 1200 | 1200.0 @ Peak | Pulse | 17.3 @ 960 | |
| MMRF1312HSR5 | RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V | Active | 60 | 1200 | 1200.0 @ Peak | Pulse | 17.3 @ 960 | |
| MMRF1314GSR5 | RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V | Active | 60 | 1600 | 1000.0 @ Peak | Pulse | 15.5 @ 1200 | |
| MMRF1314HR5 | RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V | Active | 60 | 1600 | 1000.0 @ Peak | Pulse | 15.5 @ 1200 | |
| MMRF1314HSR5 | RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V | Active | 60 | 1600 | 1000.0 @ Peak | Pulse | 15.5 @ 1200 | |
| MMRF1316NR1 | WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V | Active | 54.8 | 400 | 300.0 @ CW | CW | 25.0 @ 230 | |
| MMRF1317HR5 | RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V | Active | 61.1 | 1500 | 1500.0 @ Peak | Pulse | 18.9 @ 1030 | |
| MMRF1317HSR5 | RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V | Active | 61.1 | 1500 | 1500.0 @ Peak | Pulse | 18.9 @ 1030 | |
| MMRF1320GNR1 | WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V | Active | 51.8 | 150.0 @ CW | CW | 26.3 @ 230 | ||
| MMRF2004NBR1 | WiMax RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V | Active | 44 | 35 | 4.0 @ AVG | WiMAX | 28.5 @ 2700 | |
| MMRF2010GNR1 | Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V | Active | 54 | 275 | 250.0 @ Peak | Pulse | 32.5 @ 1030 | |
| MMRF2010NR1 | Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V | Active | 54 | 275 | 250.0 @ Peak | Pulse | 32.5 @ 1030 | |
| MMRF5014HR5 | WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V | Active | 51 | 185 | 125.0 @ CW | CW | 16.0 @ 2500 | |
| MMRF5017HSR5 | Wideb RF Power GaN Transistor, 30-2200 MHz, 125 W CW, 50 V | Active | 51 | 125.0 @ CW | CW | 18.0 @ 520 | ||
| MMW9002KCAZ | 4-Channel Analog Beaming Integrated Circuit, 2650-2950 MHz, 25 dB, -36 dBm, 6 dB NF | Active | ||||||
| MMW9002KCZ | 4-Channel Analog Beaming Integrated Circuit, 2650-2950 MHz, 25 dB, -36 dBm, 6 dB NF | Active | ||||||
| MRF101AN | Wideb RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | Active | 50 | Pulse | 21.1 @ 230 | |||
| MRF101BN | Wideb RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | Active | 50 | Pulse | 21.1 @ 230 | |||
| MRF13750HR5 | RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V | Active | 58.8 | CW | 20.5 @ 915 | |||
| MRF13750HSR5 | RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V | Active | 58.8 | CW | 20.5 @ 915 | |||
| MRF1K50GNR5 | Wideb RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V | Active | 61.8 | 1500.0 @ Peak | Pulse | 23.4 @ 230 | ||
| MRF1K50HR5 | Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V | Active | 61.8 | 1700 | 1500.0 @ Peak | Pulse | 23.7 @ 230 | |
| MRF1K50NR5 | Wideb RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V | Active | 61.8 | 1500.0 @ Peak | Pulse | 23.4 @ 230 | ||
| MRF24G300HR5 | RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | Active | 54.8 | CW | 15.2 @ 2450 | |||
| MRF24G300HSR5 | RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | Active | 54.8 | CW | 15.2 @ 2450 | |||
| MRF300AN | RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V | Active | 54.8 | Pulse | 20.4 @ 230 | |||
| MRF300BN | RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V | Active | 54.8 | Pulse | 20.4 @ 230 | |||
| MRF6S20010GNR1 | GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | Active | 40 | 1.0 @ AVG | WCDMA | 15.5 @ 2170 | ||
| MRF6V10010NR4 | Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V | Active | 40 | 11.7 | 10.0 @ Peak | Pulse | 25.0 @ 1090 | |
| MRF6V12250HR5 | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V | Active | 54.4 | 338 | 275.0 @ Peak | Pulse | 20.3 @ 1030 | |
| MRF6V12250HSR5 | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V | Active | 54.4 | 338 | 275.0 @ Peak | Pulse | 20.3 @ 1030 | |
| MRF6V12500GSR5 | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | Active | 57 | 575 | 500.0 @ Peak | Pulse | 19.7 @ 1030 | |
| MRF6V12500HR5 | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | Active | 57 | 575 | 500.0 @ Peak | Pulse | 19.7 @ 1030 | |
| MRF6V12500HSR5 | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | Active | 57 | 575 | 500.0 @ Peak | Pulse | 19.7 @ 1030 | |
| MRF6V14300HR5 | Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V | Active | 55.2 | 339 | 330.0 @ Peak | Pulse | 18.0 @ 1400 | |
| MRF6V14300HSR5 | Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V | Active | 55.2 | 339 | 330.0 @ Peak | Pulse | 18.0 @ 1400 | |
| MRF8P20140WGHSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V | Active | 51.5 | 52.3 | 170 | 24.0 @ AVG | WCDMA | 16.0 @ 1920 |
| MRF8P20140WHR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V | Active | 51.5 | 52.3 | 170 | 24.0 @ AVG | WCDMA | 16.0 @ 1920 |
| MRF8P20140WHSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V | Active | 51.5 | 52.3 | 170 | 24.0 @ AVG | WCDMA | 16.0 @ 1920 |
| MRF8P20160HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V | Active | 50.3 | 52 | 160 | 37.0 @ AVG | WCDMA | 16.5 @ 1920 |
| MRF8P29300HR6 | Lateral N-Channel Broadb RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V | Active | 55.1 | 328 | 320.0 @ Peak | Pulse | 13.3 @ 2900 | |
| MRF8P8300HSR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V | Active | 55.3 | 96.0 @ AVG | WCDMA | 20.9 @ 820 | ||
| MRF8P9040NR1 | CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V | Active | 46.2 | 4.0 @ AVG | WCDMA | 19.1 @ 960 | ||
| MRF8P9210NR3 | Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V | Active | 52.9 | 54.6 | 290 | 63.0 @ AVG | WCDMA | 16.7 @ 960 |
| MRF8S9120NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V | Active | 50.8 | 33.0 @ AVG | WCDMA | 19.8 @ 960 | ||
| MRF8S9232NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 63 W Avg., 28 V | Active | 53.6 | 63.0 @ AVG | WCDMA | 18.1 @ 960 | ||
| MRF8VP13350GNR3 | RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V | Active | 55.4 | 450 | 350.0 @ CW | CW | 20.7 @ 915 | |
| MRF8VP13350NR3 | RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V | Active | 55.4 | 450 | 350.0 @ CW | CW | 20.7 @ 915 | |
| MRF8VP13350NR5 | RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V | Active | 55.4 | 450 | 350.0 @ CW | CW | 20.7 @ 915 | |
| MRFE6S9060NR1 | Single N-CDMA Lateral N-Channel Broadb RF Power MOSFET, 880 MHz, 14 W Avg., 28 V | Active | 47.8 | 135 | 14.0 @ AVG | N-CDMA | 21.1 @ 880 | |
| MRFE6VP100HR5 | Broadb RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | Active | 50 | 126 | 100.0 @ CW | 1-TONE | 27.2 @ 512 | |
| MRFE6VP100HSR5 | Broadb RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | Active | 50 | 126 | 100.0 @ CW | 1-TONE | 27.2 @ 512 | |
| MRFE6VP5150GNR1 | WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V | Active | 51.8 | 180 | 150.0 @ CW | CW | 26.3 @ 230 | |
| MRFE6VP5150NR1 | WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V | Active | 51.8 | 180 | 150.0 @ CW | CW | 26.3 @ 230 | |
| MRFE6VP5300GNR1 | WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V | Active | 54.8 | 375 | 300.0 @ CW | CW | 25.0 @ 230 | |
| MRFE6VP5300NR1 | WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V | Active | 54.8 | 375 | 300.0 @ CW | CW | 25.0 @ 230 | |
| MRFE6VP5600HR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | Active | 57.8 | 675 | 600.0 @ CW | 1-TONE | 24.6 @ 230 | |
| MRFE6VP5600HR6 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | Active | 57.8 | 675 | 600.0 @ CW | 1-TONE | 24.6 @ 230 | |
| MRFE6VP5600HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | Active | 57.8 | 675 | 600.0 @ CW | 1-TONE | 24.6 @ 230 | |
| MRFE6VP61K25GNR6 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | Active | 61 | 1600 | 1250.0 @ Peak | Pulse | 23.0 @ 230 | |
| MRFE6VP61K25GSR5 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | Active | 61 | 1600 | 1250.0 @ CW | 1-TONE | 22.9 @ 230 | |
| MRFE6VP61K25HR5 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | Active | 61 | 1600 | 1250.0 @ CW | 1-TONE | 22.9 @ 230 | |
| MRFE6VP61K25HR6 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | Active | 61 | 1600 | 1250.0 @ CW | 1-TONE | 22.9 @ 230 | |
| MRFE6VP61K25HSR5 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | Active | 61 | 1600 | 1250.0 @ CW | 1-TONE | 22.9 @ 230 | |
| MRFE6VP61K25NR6 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | Active | 61 | 1600 | 1250.0 @ Peak | Pulse | 23.0 @ 230 | |
| MRFE6VP6300HR3 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | End of Life | 54.8 | 56 | 400 | 300.0 @ CW | 1-TONE | 25.0 @ 130 |
| MRFE6VP6300HR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | Active | 54.8 | 56 | 400 | 300.0 @ CW | 1-TONE | 25.0 @ 130 |
| MRFE6VP6300HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | Active | 54.8 | 56 | 400 | 300.0 @ CW | 1-TONE | 25.0 @ 130 |
| MRFE6VP6600GNR3 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V | Active | 57.8 | 59.5 | 900 | 600.0 @ CW | CW | 24.0 @ 98 |
| MRFE6VP6600NR3 | Wideb RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V | Active | 57.8 | 59.5 | 900 | 600.0 @ CW | CW | 24.0 @ 98 |
| MRFE6VS25GNR1 | Wideb RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | Active | 44 | 35 | 25.0 @ CW | CW | 25.5 @ 512 | |
| MRFE6VS25LR5 | Wideb RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | Active | 44 | 35 | 25.0 @ Peak | Pulse | 25.9 @ 512 | |
| MRFE6VS25NR1 | Wideb RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | Active | 44 | 35 | 25.0 @ CW | CW | 25.5 @ 512 | |
| MRFE8VP8600HR5 | 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor | Active | 59 | 59.7 | 925 | 140.0 @ AVG | OFDM | 20.0 @ 810 |
| MRFE8VP8600HSR5 | 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor | Active | 59 | 59.7 | 925 | 140.0 @ AVG | OFDM | 20.0 @ 810 |
| MRFX035HR5 | Wideb RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V | Active | 45.4 | CW | 24.8 @ 230 | |||
| MRFX1K80GNR5 | Wideb RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | Active | 62.6 | Pulse | 24.4 @ 230 | |||
| MRFX1K80HR5 | Wideb RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | Active | 62.6 | Pulse | 25.1 @ 230 | |||
| MRFX1K80NR5 | Wideb RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | Active | 62.6 | Pulse | 24.4 @ 230 | |||
| MRFX600GSR5 | Wideb RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | Active | 57.8 | Pulse | 26.4 @ 230 | |||
| MRFX600HR5 | Wideb RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | Active | 57.8 | Pulse | 26.4 @ 230 | |||
| MRFX600HSR5 | Wideb RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | Active | 57.8 | Pulse | 26.4 @ 230 | |||
| MW6S004NT1 | Lateral N-Channel RF Power MOSFET, 1-2000 MHz, 4 W, 28 V | Active | 36 | 4.0 @ PEP | 2-TONE | 18.0 @ 1960 | ||
| MW6S010GNR1 | Lateral N-Channel Broadb RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | Active | 40 | 10.0 @ PEP | 2-TONE | 18.0 @ 960 | ||
| MW7IC008NT1 | RF LDMOS Wideb Integrated Power Amplifier, 100-1000 MHz, 8 W Peak, 28 V | Active | 38.1 | 6.5 @ CW | 1-TONE | 23.5 @ 900 | ||
| MW7IC2020NT1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 2.4 W Avg., 28 V | Active | 43 | 2.4 @ AVG | WCDMA | 32.6 @ 2140 | ||
| MW7IC2040NR1 | Single W-CDMA, GSM/EDGE, RF LDMOS Wideb Integrated PA, 1930-1990 MHz, 1805-1880 MHz, 4 W, 28 V | Active | 44.8 | 4.0 @ AVG | WCDMA | 32.0 @ 1930 | ||
| MW7IC2240NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 4 W Avg., 28 V | Active | 46 | 4.0 @ AVG | WCDMA | 30.0 @ 2110 | ||
| MW7IC2725NR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V | Active | 44 | 4.0 @ AVG | WiMAX | 28.5 @ 2700 | ||
| MW7IC915NT1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-960 MHz, 1.6 W Avg., 28 V | Active | 41.9 | 1.6 @ AVG | WCDMA | 38.0 @ 880 | ||
| MW7IC930GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V | Active | 44.9 | 3.2 @ AVG | WCDMA | 35.9 @ 940 | ||
| MW7IC930NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V | Active | 44.9 | 3.2 @ AVG | WCDMA | 35.9 @ 940 | ||
| A2T07D160W04SR3 | Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V | Not Recommended for New Designs | 49 | 52.7 | 186 | 30.0 @ AVG | WCDMA | 21.5 @ 803 |
| A2T18S160W31GSR3 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V | Not Recommended for New Designs | 51.1 | 32.0 @ AVG | WCDMA | 19.9 @ 1880 | ||
| A2T20H330W24SR6 | Airfast RF Power LDMOS Transistor 1880-2025 MHz, 58 W Avg., 28 V | Not Recommended for New Designs | 53.8 | 55.8 | 380 | 58.0 @ AVG | WCDMA | 16.9 @ 1960 |
| AFT05MS006NT1 | Wideb RF Power LDMOS Transistor, 136-941 MHz, 6 W, 7.5 V | Not Recommended for New Designs | 37.8 | 6.0 @ CW | CW | 18.3 @ 520 | ||
| AFT18S260W31GSR3 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V | Not Recommended for New Designs | 53.6 | 50.0 @ AVG | WCDMA | 19.6 @ 1880 | ||
| AFT21H350W03SR6 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V | Not Recommended for New Designs | 50.4 | 56 | 400 | 63.0 @ AVG | WCDMA | 16.4 @ 2110 |
| AFT21S230SR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V | Not Recommended for New Designs | 52.6 | 50.0 @ AVG | WCDMA | 16.7 @ 2110 | ||
| AFT21S230SR5 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V | No Longer Manufactured | 52.6 | 50.0 @ AVG | WCDMA | 16.7 @ 2110 | ||
| AFT23S160W02SR3 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V | Not Recommended for New Designs | 51.9 | 45.0 @ AVG | WCDMA | 17.9 @ 2400 | ||
| AFT26P100-4WGSR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 22 W Avg., 28 V | Not Recommended for New Designs | 49.4 | 51 | 125 | 22.0 @ AVG | WCDMA | 15.3 @ 2690 |
| MD7IC2012NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V | Not Recommended for New Designs | 40.8 | 41.1 | 13 | 1.3 @ AVG | WCDMA | 31.5 @ 2170 |
| MD7IC2250NBR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V | Not Recommended for New Designs | 47.3 | 5.3 @ AVG | WCDMA | 31.1 @ 2170 | ||
| MD7IC2755GNR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 10 W Avg., 28 V | Not Recommended for New Designs | 44.8 | 10.0 @ AVG | WiMAX | 25.0 @ 2700 | ||
| MMRF1304GNR1 | Wideb RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | Not Recommended for New Designs | 44 | 35 | 25.0 @ CW | CW | 25.5 @ 512 | |
| MMRF1304NR1 | Wideb RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | Not Recommended for New Designs | 44 | 35 | 25.0 @ CW | CW | 25.5 @ 512 | |
| MMRF1305HR5 | Broadb RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | Not Recommended for New Designs | 50 | 100.0 @ CW | 1-TONE | 27.2 @ 512 | ||
| MMRF1306HR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | Not Recommended for New Designs | 61 | 1250.0 @ CW | 1-TONE | 22.9 @ 230 | ||
| MMRF1308HR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | Not Recommended for New Designs | 57.8 | 600.0 @ CW | 1-TONE | 24.6 @ 230 | ||
| MMRF1310HR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | Not Recommended for New Designs | 54.8 | 300.0 @ CW | 1-TONE | 25.0 @ 130 | ||
| MMRF1320NR1 | WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V | Not Recommended for New Designs | 51.8 | 150.0 @ CW | CW | 26.3 @ 230 | ||
| MRF1518NT1 | Lateral N-Channel Broadb RF Power MOSFET, 520 MHz, 8 W, 12.5 V | Not Recommended for New Designs | 39 | 8.0 @ CW | 1-TONE | 13.0 @ 520 | ||
| MRF6VP121KHR5 | Lateral N-Channel Broadb RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V | Not Recommended for New Designs | 60 | 1182 | 1000.0 @ Peak | Pulse | 20.0 @ 1030 | |
| MRF8P20165WHR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1995 MHz, 37 W Avg., 28 V | Not Recommended for New Designs | 50.2 | 52.8 | 190 | 37.0 @ AVG | WCDMA | 16.3 @ 1960 |
| MRF8P9040GNR1 | CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V | Not Recommended for New Designs | 46.2 | 4.0 @ AVG | WCDMA | 19.1 @ 960 | ||
| MRF8S18210WGHSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg., 30 V | Not Recommended for New Designs | 53.2 | 50.0 @ AVG | WCDMA | 17.8 @ 1930 | ||
| MRF8S18210WGHSR5 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg., 30 V | No Longer Manufactured | 53.2 | 50.0 @ AVG | WCDMA | 17.8 @ 1930 | ||
| MRF8S9200NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V | Not Recommended for New Designs | 53 | 58.0 @ AVG | WCDMA | 19.9 @ 940 | ||
| MRFE6S9045NR1 | Single N-CDMA Lateral N-Channel Broadb RF Power MOSFET, 880 MHz, 10 W Avg., 28 V | Not Recommended for New Designs | 46.5 | 10.0 @ AVG | N-CDMA | 22.1 @ 880 | ||
| MW6S010NR1 | Lateral N-Channel Broadb RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | Not Recommended for New Designs | 40 | 10.0 @ PEP | 18.0 @ 960 | |||
| MW7IC2240GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 4 W Avg., 28 V | Not Recommended for New Designs | 46 | 4.0 @ AVG | WCDMA | 30.0 @ 2110 | ||
| MW7IC2725GNR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V | Not Recommended for New Designs | 44 | 4.0 @ AVG | WiMAX | 28.5 @ 2700 | ||
| MW7IC930NBR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V | Not Recommended for New Designs | 44.9 | 3.2 @ AVG | WCDMA | 35.9 @ 940 | ||
| A2G22S160-01SR3 | Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V | End of Life | 51 | 52 | 160 | 32.0 @ AVG | WCDMA | 19.6 @ 2110 |
| A2T18H450W19SR6 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 89 W Avg., 30 V | End of Life | 53 | 57.4 | 550 | 89.0 @ AVG | WCDMA | 16.5 @ 1880 |
| A2T18H455W23NR6 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 87 W Avg., 31.5 V | End of Life | 56.4 | 57.7 | 589 | 87.0 @ AVG | WCDMA | 15.9 @ 1880 |
| A2T18S160W31SR3 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V | End of Life | 51.1 | 32.0 @ AVG | WCDMA | 19.9 @ 1880 | ||
| A2T18S162W31GSR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V | End of Life | 51.1 | 32.0 @ AVG | WCDMA | 20.1 @ 1840 | ||
| A2T18S162W31SR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V | End of Life | 51.1 | 32.0 @ AVG | WCDMA | 20.1 @ 1840 | ||
| A2T18S260W12NR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V | End of Life | 54.5 | 56.0 @ AVG | WCDMA | 18.7 @ 1880 | ||
| A2T18S261W12NR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V | End of Life | 54.5 | 56.0 @ AVG | WCDMA | 18.2 @ 1880 | ||
| A2T20H330W24NR6 | Airfast RF Power LDMOS Transistor 1880-2025 MHz, 71 W Avg., 28 V | End of Life | 53.6 | 55.8 | 383 | 55.0 @ AVG | WCDMA | 15.9 @ 1880 |
| A2T21H450W19SR6 | Airfast RF Power LDMOS Transistor 2110-2200 MHz, 89 W Avg., 30 V | End of Life | 55.9 | 57.2 | 525 | 89.0 @ AVG | WCDMA | 15.7 @ 2110 |
| AFT05MS003NT1 | Airfast Wideb RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V | End of Life | 38.4 | 3.0 @ CW | CW | 20.8 @ 520 | ||
| AFT09S200W02GNR3 | Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V | End of Life | 53 | 56.0 @ AVG | WCDMA | 19.2 @ 960 | ||
| AFT09S200W02NR3 | Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V | End of Life | 53 | 56.0 @ AVG | WCDMA | 19.2 @ 960 | ||
| AFT09S220-02NR3 | HV9 900MHz 30W OM780-2L | End of Life | 53.4 | 54.0 @ AVG | WCDMA | 19.5 @ 920 | ||
| AFT18H357-24NR6 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 63 W Avg., 28 V | End of Life | 53 | 55 | 316 | 63.0 @ AVG | WCDMA | 17.5 @ 1805 |
| AFT18S260W31SR3 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V | End of Life | 53.6 | 50.0 @ AVG | WCDMA | 19.6 @ 1880 | ||
| AFT20P140-4WGNR3 | Airfast RF Power LDMOS Transistor, 1880-2025 MHz, 24 W Avg., 28 V | End of Life | 51.1 | 52.3 | 170 | 24.0 @ AVG | WCDMA | 17.6 @ 2025 |
| AFT21H350W04GSR6 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V | End of Life | 50.4 | 56 | 400 | 63.0 @ AVG | WCDMA | 16.4 @ 2110 |
| AFT21S140W02SR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 32 W Avg., 28 V | End of Life | 50.5 | 32.0 @ AVG | WCDMA | 19.3 @ 2140 | ||
| AFT21S220W02SR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V | End of Life | 53.2 | 50.0 @ AVG | WCDMA | 19.1 @ 2140 | ||
| AFT26H200W03SR6 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 45 W Avg., 28 V | End of Life | 53 | 54.5 | 280 | 45.0 @ AVG | WCDMA | 14.1 @ 2496 |
| AFT26HW050SR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 9 W Avg., 28 V | End of Life | 46.2 | 47.3 | 54 | 9.0 @ AVG | WCDMA | 14.2 @ 2690 |
| MHE1003NR3 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 220 W CW, 26 V | End of Life | 53.1 | 245 | 220.0 @ CW | CW | 14.1 @ 2450 | |
| MHT1002NR3 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 915 MHz, 350 W, 48 V | End of Life | 55.9 | 443 | 350.0 @ CW | CW | 20.7 @ 915 | |
| MHT1003NR3 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 250 W, 32 V | End of Life | 54.2 | 294 | 250.0 @ CW | 1-TONE | 15.9 @ 2450 | |
| MHT1004GNR3 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 300 W, 32 V | End of Life | 54.5 | 300.0 @ CW | CW | 15.2 @ 2450 | ||
| MHT1004NR3 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 300 W, 32 V | End of Life | 54.5 | 300.0 @ CW | CW | 15.2 @ 2450 | ||
| MHT1108NT1 | RF Power LDMOS Transistor for Consumer Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V | End of Life | 41 | 12.5 @ CW | CW | 18.6 @ 2450 | ||
| MHT2000GNR1 | RF LDMOS Integrated Power Amplifier for Consumer Commercial Cooking, 2450 MHz, 25 W CW, 28 V | End of Life | 44 | 25.0 @ CW | 1-TONE | 27.7 @ 2450 | ||
| MHT2000NR1 | RF LDMOS Integrated Power Amplifier for Consumer Commercial Cooking, 2450 MHz, 25 W CW, 28 V | End of Life | 44 | 25.0 @ CW | 1-TONE | 27.7 @ 2450 | ||
| MMRF1005HR5 | Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V | End of Life | 54 | 350 | 250.0 @ Peak | Pulse | 22.7 @ 1300 | |
| MMRF1005HSR5 | Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V | End of Life | 54 | 350 | 250.0 @ Peak | Pulse | 22.7 @ 1300 | |
| MMRF1007HR5 | Lateral N-Channel Broadb RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V | End of Life | 60 | 1200 | 1000.0 @ Peak | Pulse | 20.0 @ 1030 | |
| MMRF1008HSR5 | Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V | End of Life | 54.4 | 338 | 275.0 @ Peak | Pulse | 20.3 @ 1030 | |
| MMRF1011HR5 | Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V | End of Life | 55.2 | 339 | 330.0 @ Peak | Pulse | 18.0 @ 1400 | |
| MMRF1017NR3 | RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V | End of Life | 54.5 | 416 | 80.0 @ AVG | WCDMA | 20.0 @ 960 | |
| MMRF1018NR1 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MMRF1018NBR1 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MMRF1022HSR5 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V | End of Life | 54.8 | 400 | 63.0 @ AVG | WCDMA | 16.2 @ 2140 | |
| MMRF1023HSR5 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V | End of Life | 54.4 | 410 | 66.0 @ AVG | WCDMA | 14.9 @ 2300 | |
| MMRF1304LR5 | Wideb RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | End of Life | 44 | 35 | 25.0 @ Peak | Pulse | 25.9 @ 512 | |
| MMRF1306HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | End of Life | 61 | 1250.0 @ CW | 1-TONE | 22.9 @ 230 | ||
| MMRF1308HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | End of Life | 57.8 | 600.0 @ CW | 1-TONE | 24.6 @ 230 | ||
| MMRF1315NR1 | Broadb RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V | End of Life | 47.8 | 135 | 14.0 @ AVG | N-CDMA | 21.1 @ 880 | |
| MMRF1318NR1 | Broadb RF Power LDMOS Transistor 10-600 MHz, 300 W CW, 50 V | End of Life | 54.8 | 403 | 300.0 @ CW | CW | 22.0 @ 450 | |
| MMRF2005GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V | End of Life | 44.9 | 51 | 3.2 @ AVG | WCDMA | 35.9 @ 940 | |
| MMRF2005NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V | End of Life | 44.9 | 51 | 3.2 @ AVG | WCDMA | 35.9 @ 940 | |
| MMRF2006NT1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 2.4 W Avg., 28 V | End of Life | 43 | 40 | 2.4 @ AVG | WCDMA | 32.6 @ 2140 | |
| MMRF2007GNR1 | RF LDMOS Wideb Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V | End of Life | 49 | 35.0 @ AVG | 2-TONE | 32.6 @ 940 | ||
| MMRF2007NR1 | RF LDMOS Wideb Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V | End of Life | 49 | 35.0 @ AVG | 2-TONE | 32.6 @ 940 | ||
| MRF1511NT1 | Lateral N-Channel Broadb RF Power MOSFET, 175 MHz, 8 W, 7.5 V | End of Life | 39 | 8.0 @ CW | 1-TONE | 13.0 @ 175 | ||
| MRF1513NT1 | Lateral N-Channel Broadb RF Power MOSFET, 520 MHz, 3 W, 12.5 V | End of Life | 34.8 | 3.0 @ CW | 1-TONE | 15.0 @ 520 | ||
| MRF1517NT1 | Lateral N-Channel Broadb RF Power MOSFET, 520 MHz, 8 W, 7.5 V | End of Life | 39 | 8.0 @ CW | 1-TONE | 14.0 @ 520 | ||
| MRF1535FNT1 | Lateral N-Channel Broadb RF Power MOSFET, 520 MHz, 35 W, 12.5 V | End of Life | 45.4 | 35.0 @ CW | 1-TONE | 13.5 @ 520 | ||
| MRF1535NT1 | Lateral N-Channel Broadb RF Power MOSFET, 520 MHz, 35 W, 12.5 V | End of Life | 45.4 | 35.0 @ CW | 1-TONE | 13.5 @ 520 | ||
| MRF24300NR3 | RF POWER LDMOS TRANSISTOR, 2450 MHz, 300 W, 32 V | End of Life | 54.8 | 320 | 300.0 @ CW | CW | 13.1 @ 2450 | |
| MRF6S20010NR1 | GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | End of Life | 40 | 1.0 @ AVG | WCDMA | 15.5 @ 2170 | ||
| MRF6V13250HSR5 | Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V | End of Life | 54 | 345 | 250.0 @ Peak | Pulse | 22.7 @ 1300 | |
| MRF6V2010GNR1 | Lateral N-Channel Broadb RF Power MOSFET, 10-450 MHz, 10 W, 50 V | End of Life | 40 | 10.0 @ CW | 1-TONE | 23.9 @ 220 | ||
| MRF6V2010NR1 | Lateral N-Channel Broadb RF Power MOSFET, 10-450 MHz, 10 W, 50 V | End of Life | 40 | 10.0 @ CW | 1-TONE | 23.9 @ 220 | ||
| MRF6V2010NBR1 | Lateral N-Channel Broadb RF Power MOSFET, 10-450 MHz, 10 W, 50 V | End of Life | 40 | 10.0 @ CW | 1-TONE | 23.9 @ 220 | ||
| MRF6V2010NBR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-450 MHz, 10 W, 50 V | No Longer Manufactured | 40 | 10.0 @ CW | 1-TONE | 23.9 @ 220 | ||
| MRF6V2150NR1 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-450 MHz, 150 W, 50 V | End of Life | 51.8 | 182 | 150.0 @ CW | 25.0 @ 220 | ||
| MRF6V2150NBR1 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-450 MHz, 150 W, 50 V | End of Life | 51.8 | 150.0 @ CW | 1-TONE | 25.0 @ 220 | ||
| MRF6V2150NBR5 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-450 MHz, 150 W, 50 V | No Longer Manufactured | 51.8 | 150.0 @ CW | 1-TONE | 25.0 @ 220 | ||
| MRF6V3090NR1 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6V3090NR5 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | No Longer Manufactured | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6V3090NBR1 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6V3090NBR5 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | No Longer Manufactured | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6VP11KGSR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-150 MHz, 1000 W, 50 V | End of Life | 60 | 1327 | 1000.0 @ Peak | Pulse | 26.0 @ 130 | |
| MRF6VP11KHR5 | Lateral N-Channel Broadb RF Power MOSFET, 1.8-150 MHz, 1000 W, 50 V | End of Life | 60 | 1327 | 1000.0 @ Peak | Pulse | 26.0 @ 130 | |
| MRF6VP121KHSR5 | Lateral N-Channel Broadb RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V | End of Life | 60 | 1182 | 1000.0 @ Peak | Pulse | 20.0 @ 1030 | |
| MRF6VP3091NR1 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6VP3091NR5 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6VP3091NBR1 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6VP3091NBR5 | Broadb RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V | End of Life | 49.5 | 134 | 18.0 @ AVG | OFDM | 22.0 @ 860 | |
| MRF6VP3450HR5 | Lateral N-Channel Broadb RF Power MOSFET, 860 MHz, 450 W, 50 V | End of Life | 56.5 | 610 | 90.0 @ AVG | OFDM | 22.5 @ 860 | |
| MRF6VP3450HR6 | Lateral N-Channel Broadb RF Power MOSFET, 860 MHz, 450 W, 50 V | No Longer Manufactured | 56.5 | 610 | 90.0 @ AVG | OFDM | 22.5 @ 860 | |
| MRF6VP3450HSR5 | Lateral N-Channel Broadb RF Power MOSFET, 860 MHz, 450 W, 50 V | End of Life | 56.5 | 610 | 90.0 @ AVG | OFDM | 22.5 @ 860 | |
| MRF7S24250NR3 | RF POWER LDMOS TRANSISTOR, 2450 MHz, 250 W, 32 V | End of Life | 54 | 285 | 250.0 @ CW | CW | 14.7 @ 2450 | |
| MRF8P29300HSR6 | Lateral N-Channel Broadb RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V | End of Life | 55.1 | 328 | 320.0 @ Peak | Pulse | 13.3 @ 2900 | |
| MRF8P8300HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V | End of Life | 55.3 | 96.0 @ AVG | WCDMA | 20.9 @ 820 | ||
| MRF8P9300HSR5 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 100 W Avg., 28 V | No Longer Manufactured | 55.1 | 100.0 @ AVG | WCDMA | 19.4 @ 960 | ||
| MRF8P9300HSR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 100 W Avg., 28 V | End of Life | 55.1 | 100.0 @ AVG | WCDMA | 19.4 @ 960 | ||
| MRF8S7120NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 32 W Avg., 28 V | End of Life | 51 | 32.0 @ AVG | WCDMA | 19.2 @ 768 | ||
| MRF8S7170NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 50 W Avg., 28 V | End of Life | 52.6 | 50.0 @ AVG | WCDMA | 19.5 @ 748 | ||
| MRF8S7235NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 63 W Avg., 28 V | End of Life | 54.1 | 63.0 @ AVG | WCDMA | 20.0 @ 728 | ||
| MRF8S9220HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V | End of Life | 53.4 | 65.0 @ AVG | WCDMA | 19.4 @ 960 | ||
| MRFE6S9125NR1 | Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V | End of Life | 51 | 27.0 @ AVG | N-CDMA | 20.2 @ 880 | ||
| MRFE6S9125NBR1 | Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V | End of Life | 51 | 27.0 @ AVG | N-CDMA | 20.2 @ 880 | ||
| MRFE6VP8600HR5 | LDMOS Broadb RF Power Transistor, 470-860 MHz, 600 W, 50 V | End of Life | 57.8 | 59 | 794 | 125.0 @ AVG | OFDM | 19.3 @ 860 |
| MRFE6VP8600HSR5 | LDMOS Broadb RF Power Transistor, 470-860 MHz, 600 W, 50 V | End of Life | 57.8 | 59 | 794 | 125.0 @ AVG | OFDM | 19.3 @ 860 |
| MW5IC970NBR1 | RF LDMOS Wideb 2-Stage Power Amplifier, 800-900 MHz, 70 W, 28 V | End of Life | 48.5 | 70.0 @ PEP | 2-TONE | 30.0 @ 870 | ||
| A2T08VD021NT1 | Airfast RF Power LDMOS Transistor, 728–960 MHz, 2 W Avg., 48 V | No Longer Manufactured | 42.7 | 43.4 | 21.9 | 2.0 @ AVG | WCDMA | |
| AFT09S200W02SR3 | Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V | No Longer Manufactured | 51.7 | 56.0 @ AVG | WCDMA | 19.4 @ 960 | ||
| AFT18HW355SR5 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V | No Longer Manufactured | 55.4 | 56 | 400 | 63.0 @ AVG | WCDMA | 15.2 @ 1880 |
| AFT18HW355SR6 | Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V | No Longer Manufactured | 55.4 | 56 | 400 | 63.0 @ AVG | WCDMA | 15.2 @ 1880 |
| AFT21S140W02GSR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 32 W Avg., 28 V | No Longer Manufactured | 50.5 | 32.0 @ AVG | WCDMA | 19.3 @ 2140 | ||
| AFT21S220W02GSR3 | Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V | No Longer Manufactured | 53.2 | 50.0 @ AVG | WCDMA | 19.1 @ 2140 | ||
| AFT23S160W02GSR3 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V | No Longer Manufactured | 51.9 | 45.0 @ AVG | WCDMA | 17.9 @ 2400 | ||
| AFT23S170-13SR3 | Airfast RF Power LDMOS Transistor, 2300-2400 MHz 45 W Avg., 28 V | No Longer Manufactured | 51.7 | 45.0 @ AVG | WCDMA | 18.8 @ 2400 | ||
| AFT26H050W26SR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 9 W Avg., 28 V | No Longer Manufactured | 46.2 | 47.3 | 54 | 9.0 @ AVG | WCDMA | 14.2 @ 2690 |
| AFT26H250W03SR6 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V | No Longer Manufactured | 53.6 | 55.1 | 320 | 50.0 @ AVG | WCDMA | 14.1 @ 2496 |
| AFT26HW050GSR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 9 W Avg., 28 V | No Longer Manufactured | 46.2 | 47.3 | 54 | 9.0 @ AVG | WCDMA | 14.2 @ 2690 |
| AFT26P100-4WSR3 | Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 22 W Avg., 28 V | No Longer Manufactured | 49.4 | 51 | 125 | 22.0 @ AVG | WCDMA | 15.3 @ 2690 |
| MD7IC2012GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V | No Longer Manufactured | 40.8 | 41.1 | 13 | 1.3 @ AVG | WCDMA | 31.5 @ 2170 |
| MD7IC2050NBR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V | No Longer Manufactured | ||||||
| MD7IC2250NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V | No Longer Manufactured | ||||||
| MD7IC2251NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 12 W Avg., 28 V | No Longer Manufactured | 46 | 47.6 | 58 | 12.0 @ AVG | WCDMA | 29.0 @ 2140 |
| MRF085HR3 | Wideb RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V. | No Longer Manufactured | 49.3 | CW | 25.6 @ 520 | |||
| MRF085HR5 | Wideb RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V. | No Longer Manufactured | 49.3 | CW | 25.6 @ 520 | |||
| MRF1550FNT1 | Lateral N-Channel Broadb RF Power MOSFET, 175 MHz, 50 W, 12.5 V | No Longer Manufactured | 47 | 50.0 @ CW | 1-TONE | 14.5 @ 175 | ||
| MRF1550NT1 | Lateral N-Channel Broadb RF Power MOSFET, 175 MHz, 50 W, 12.5 V | No Longer Manufactured | 47 | 50.0 @ CW | 1-TONE | 14.5 @ 18 | ||
| MRF1570FNT1 | Lateral N-Channel Broadb RF Power MOSFET, 470 MHz, 70 W, 12.5 V | No Longer Manufactured | 48.5 | 70.0 @ CW | 1-TONE | 11.5 @ 470 | ||
| MRF1570NT1 | Lateral N-Channel Broadb RF Power MOSFET, 470 MHz, 70 W, 12.5 V | No Longer Manufactured | 48.5 | 70.0 @ CW | 1-TONE | 11.5 @ 470 | ||
| MRF5S9080NR1 | HV5 900MHZ 80W TO270WB4N | No Longer Manufactured | ||||||
| MRF5S9080NBR1 | GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 869-960 MHz, 80 W, 26 V | No Longer Manufactured | 49 | 80.0 @ CW | 18.0 @ 960 | |||
| MRF6P24190HR6 | CW Lateral N-Channel RF Power MOSFET, 2450 MHz, 190 W, 28 V | No Longer Manufactured | 52.8 | 300 | 190.0 @ CW | 1-TONE | 27.7 @ 2450 | |
| MRF6S18060NR1 | GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V | No Longer Manufactured | 47.8 | 60.0 @ CW | 1-TONE | 15.0 @ 1990 | ||
| MRF6S18060NBR1 | 1880MHZ 60W TO272WB4N | No Longer Manufactured | ||||||
| MRF6S19100HR3 | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 22 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF6S19100NR1 | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 22 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF6S19100NBR1 | 1990MHZ 22W TO272WB4N | No Longer Manufactured | ||||||
| MRF6S19140HSR3 | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V | No Longer Manufactured | 51.5 | 29.0 @ AVG | N-CDMA | 16.0 @ 1990 | ||
| MRF6S21140HR3 | 2 x W-CDMA, Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 30 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF6S21190HSR3 | HV6 2.1GHZ 54W NI880S | No Longer Manufactured | ||||||
| MRF6S27015GNR1 | HV6 2.7GHZ 15W TO270-2GN | No Longer Manufactured | ||||||
| MRF6S27015NR1 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V | No Longer Manufactured | 41.8 | 3.0 @ AVG | WCDMA | 14.0 @ 2600 | ||
| MRF6V13250HR5 | Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V | No Longer Manufactured | 54 | 345 | 250.0 @ Peak | Pulse | 22.7 @ 1300 | |
| MRF6V2300NR1 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 300.0 @ CW | 1-TONE | 25.5 @ 220 | ||
| MRF6V2300NR5 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 300.0 @ CW | 1-TONE | 25.5 @ 220 | ||
| MRF6V2300NBR1 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 300.0 @ CW | 1-TONE | 25.5 @ 220 | ||
| MRF6V2300NBR5 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 300.0 @ CW | 1-TONE | 25.5 @ 220 | ||
| MRF6V4300NR1 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 403 | 300.0 @ CW | 22.0 @ 450 | ||
| MRF6V4300NR5 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 403 | 300.0 @ CW | 22.0 @ 450 | ||
| MRF6V4300NBR1 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 403 | 300.0 @ CW | 22.0 @ 450 | ||
| MRF6V4300NBR5 | Lateral N-Channel Single-Ended Broadb RF Power MOSFET, 10-600 MHz, 300 W, 50 V | No Longer Manufactured | 54.8 | 403 | 300.0 @ CW | 22.0 @ 450 | ||
| MRF6VP21KHR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-235 MHz, 1000 W, 50 V | No Longer Manufactured | 60 | 1182 | 1000.0 @ Peak | Pulse | 24.0 @ 225 | |
| MRF6VP2600HR5 | Lateral N-Channel Broadb RF Power MOSFET, 2-500 MHz, 600 W, 50 V | No Longer Manufactured | 57.8 | 938 | 125.0 @ AVG | OFDM | 25.0 @ 225 | |
| MRF6VP2600HR6 | Lateral N-Channel Broadb RF Power MOSFET, 2-500 MHz, 600 W, 50 V | No Longer Manufactured | 57.8 | 938 | 125.0 @ AVG | OFDM | 25.0 @ 225 | |
| MRF6VP41KHR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | No Longer Manufactured | 60 | 1175 | 1000.0 @ Peak | Pulse | 20.0 @ 450 | |
| MRF6VP41KHSR5 | Lateral N-Channel Broadb RF Power MOSFET, 10-500 MHz, 1000 W, 50 V | No Longer Manufactured | 60 | 1175 | 1000.0 @ Peak | Pulse | 20.0 @ 450 | |
| MRF7P20040HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025 MHz, 10 W Avg., 32 V | No Longer Manufactured | 45.4 | 10.0 @ AVG | WCDMA | 18.2 @ 2025 | ||
| MRF7S15100HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1510 MHz, 23 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF7S15100HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1510 MHz, 23 W Avg., 28 V | No Longer Manufactured | 50 | 44.0 @ AVG | WCDMA | 19.5 @ 1510 | ||
| MRF7S19080HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF7S19080HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF7S19100NR1 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF7S19100NBR1 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF7S19120NR1 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 36 W Avg., 28 V | No Longer Manufactured | 50.8 | 36.0 @ AVG | WCDMA | 18.0 @ 1990 | ||
| MRF7S19170HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V | No Longer Manufactured | 52.3 | 50.0 @ AVG | WCDMA | 17.2 @ 1990 | ||
| MRF7S21080HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 22 W Avg., 28 V | No Longer Manufactured | 49 | 22.0 @ AVG | WCDMA | 18.0 @ 2170 | ||
| MRF7S21150HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 44 W Avg., 28 V | No Longer Manufactured | 51.8 | 44.0 @ AVG | WCDMA | 17.5 @ 2170 | ||
| MRF7S21170HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 50 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF7S27130HSR3 | WiMAX Lateral N-Channel RF Power MOSFET, 2500-2700 MHz, 23 W Avg., 28 V | No Longer Manufactured | 51.1 | 23.0 @ AVG | WiMAX | 16.5 @ 2700 | ||
| MRF7S38010HR3 | 3600MHZ 2W 30V NI400 | No Longer Manufactured | ||||||
| MRF8HP21080HR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V | No Longer Manufactured | 47.8 | 50 | 100 | 16.0 @ AVG | WCDMA | 14.4 @ 2170 |
| MRF8HP21080HSR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V | No Longer Manufactured | 47.8 | 50 | 100 | 16.0 @ AVG | WCDMA | 14.4 @ 2170 |
| MRF8HP21130HR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8HP21130HSR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | No Longer Manufactured | 51.1 | 28.0 @ AVG | WCDMA | 14.0 @ 2170 | ||
| MRF8P18265HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W Avg., 30 V | No Longer Manufactured | ||||||
| MRF8P18265HSR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W Avg., 30 V | No Longer Manufactured | ||||||
| MRF8P20100HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-2025 MHz, 20 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8P20100HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-2025 MHz, 20 W Avg., 28 V | No Longer Manufactured | 48.9 | 51 | 126 | 20.0 @ AVG | WCDMA | 16.0 @ 2025 |
| MRF8P20160HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V | No Longer Manufactured | 50.3 | 52 | 160 | 37.0 @ AVG | WCDMA | 16.5 @ 1920 |
| MRF8P20161HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-1920 MHz, 37 W Avg., 28 V | No Longer Manufactured | 49.9 | 51.7 | 147 | 37.0 @ AVG | WCDMA | 16.4 @ 1920 |
| MRF8P20165WHSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1995 MHz, 37 W Avg., 28 V | No Longer Manufactured | 50.2 | 52.8 | 190 | 37.0 @ AVG | WCDMA | 16.3 @ 1960 |
| MRF8P20165WHSR5 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1995 MHz, 37 W Avg., 28 V | No Longer Manufactured | 50.2 | 52.8 | 190 | 37.0 @ AVG | WCDMA | 16.3 @ 1960 |
| MRF8P23080HR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 16 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8P23080HSR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 16 W Avg., 28 V | No Longer Manufactured | 47.4 | 16.0 @ AVG | WCDMA | 14.6 @ 2300 | ||
| MRF8P23160WHR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8P23160WHSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V | No Longer Manufactured | 51.8 | 30.0 @ AVG | WCDMA | 14.1 @ 2320 | ||
| MRF8P26080HR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2500-2700 MHz, 14 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8P26080HSR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2500-2700 MHz, 14 W Avg., 28 V | No Longer Manufactured | 47.3 | 14.0 @ AVG | WCDMA | 15.0 @ 2620 | ||
| MRF8P26080HSR5 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2500-2700 MHz, 14 W Avg., 28 V | No Longer Manufactured | 47.3 | 14.0 @ AVG | WCDMA | 15.0 @ 2620 | ||
| MRF8P9040NBR1 | CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8P9300HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 100 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S18120HR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V | No Longer Manufactured | ||||||
| MRF8S18120HSR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V | No Longer Manufactured | 50.8 | 72.0 @ CW | WCDMA | 18.2 @ 1805 | ||
| MRF8S18120HSR5 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V | No Longer Manufactured | 50.8 | 72.0 @ CW | WCDMA | 18.2 @ 1805 | ||
| MRF8S18210WHSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg., 30 V | No Longer Manufactured | 53.2 | 50.0 @ AVG | WCDMA | 17.8 @ 1930 | ||
| MRF8S18210WHSR5 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg., 30 V | No Longer Manufactured | 53.2 | 50.0 @ AVG | WCDMA | 17.8 @ 1930 | ||
| MRF8S18260HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 74 W Avg., 30 V | No Longer Manufactured | ||||||
| MRF8S18260HSR5 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 74 W Avg., 30 V | No Longer Manufactured | 54.1 | 74.0 @ AVG | WCDMA | 17.9 @ 1805 | ||
| MRF8S18260HSR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 74 W Avg., 30 V | No Longer Manufactured | 54.1 | 74.0 @ AVG | WCDMA | 17.9 @ 1805 | ||
| MRF8S19140HR3 | Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S19140HSR3 | Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S19140HSR5 | Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S19260HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V | No Longer Manufactured | ||||||
| MRF8S19260HSR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V | No Longer Manufactured | ||||||
| MRF8S21100HR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S21100HSR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V | No Longer Manufactured | 50 | 24.0 @ AVG | WCDMA | 18.3 @ 2170 | ||
| MRF8S21120HR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S21120HSR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | No Longer Manufactured | 50.3 | 28.0 @ AVG | WCDMA | 17.6 @ 2170 | ||
| MRF8S21140HR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S21140HSR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S21200HR6 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 48 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S21200HSR6 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 48 W Avg., 28 V | No Longer Manufactured | 52.5 | 48.0 @ AVG | WCDMA | 18.1 @ 2140 | ||
| MRF8S23120HR3 | LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S23120HR5 | LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S23120HSR3 | LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S26060HR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 15.5 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S26060HSR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 15.5 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S26060HSR5 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 15.5 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S26120HR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S26120HSR3 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S26120HSR5 | Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S8260HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 850-895 MHz, 70 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S8260HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 850-895 MHz, 70 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S9100HR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V | No Longer Manufactured | ||||||
| MRF8S9100HR5 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V | No Longer Manufactured | ||||||
| MRF8S9100HSR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V | No Longer Manufactured | 50.3 | 72.0 @ CW | 1-TONE | 19.3 @ 920 | ||
| MRF8S9102NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 28 W Avg., 28 V | No Longer Manufactured | 50 | 28.0 @ AVG | WCDMA | 23.1 @ 920 | ||
| MRF8S9170NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 50 W Avg., 28 V | No Longer Manufactured | 52.5 | 50.0 @ AVG | WCDMA | 19.3 @ 920 | ||
| MRF8S9202GNR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V | No Longer Manufactured | 53 | 58.0 @ AVG | WCDMA | 19.0 @ 920 | ||
| MRF8S9202NR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S9220HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S9260HR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S9260HR5 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V | No Longer Manufactured | ||||||
| MRF8S9260HSR3 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V | No Longer Manufactured | 54.1 | 75.0 @ AVG | WCDMA | 18.6 @ 960 | ||
| MRF9045NR1 | Lateral N-Channel Broadb RF Power MOSFET, 945 MHz, 45 W, 28 V | No Longer Manufactured | ||||||
| MRF9060NR1 | Lateral N-Channel Broadb RF Power MOSFET, 945 MHz, 60 W, 26 V | No Longer Manufactured | ||||||
| MRFE6P3300HR3 | Lateral N-Channel RF Power MOSFET, 860 MHz, 300 W, 32 V | No Longer Manufactured | 54.8 | 424 | 270.0 @ PEP | 2-TONE | 20.4 @ 860 | |
| MRFE6P9220HR3 | Single N-CDMA Lateral N-Channel RF Power MOSFET, 865-900 MHz, 47 W Avg., 28 V | No Longer Manufactured | ||||||
| MRFE6S9046GNR1 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 35.5 W CW, 28 V | No Longer Manufactured | 46.5 | 35.5 @ CW | 1-TONE | 19.0 @ 960 | ||
| MRFE6S9046NR1 | HV6E 45W GSM TO270WB4 | No Longer Manufactured | ||||||
| MRFE6S9160HSR3 | Single N-CDMA Lateral N-Channel RF Power MOSFET, 880 MHz, 35 W Avg., 28 V | No Longer Manufactured | 52 | 35.0 @ AVG | N-CDMA | 21.0 @ 880 | ||
| MW5IC970GNBR1 | HV5IC 70W TO272WB16GN | No Longer Manufactured | ||||||
| MW7IC2040GNR1 | Single W-CDMA, GSM/EDGE, RF LDMOS Wideb Integrated PA, 1930-1990 MHz, 1805-1880 MHz, 4 W, 28 V | No Longer Manufactured | 44.8 | 4.0 @ AVG | WCDMA | 32.0 @ 1930 | ||
| MW7IC2040NBR1 | Single W-CDMA, GSM/EDGE, RF LDMOS Wideb Integrated PA, 1930-1990 MHz, 1805-1880 MHz, 4 W, 28 V | No Longer Manufactured | 44.8 | 4.0 @ AVG | WCDMA | 32.0 @ 1930 | ||
| MW7IC2220GNR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V | No Longer Manufactured | 43 | 2.0 @ AVG | WCDMA | 31.0 @ 2170 | ||
| MW7IC2220NR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V | No Longer Manufactured | 43 | 2.0 @ AVG | WCDMA | 31.0 @ 2170 | ||
| MW7IC2220NBR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V | No Longer Manufactured | 43 | 2.0 @ AVG | WCDMA | 31.0 @ 2170 | ||
| MW7IC2240NBR1 | Single W-CDMA RF LDMOS Wideb Integrated Power Amplifier, 2110-2170 MHz, 4 W Avg., 28 V | No Longer Manufactured | ||||||
| MW7IC2425GNR1 | Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V | No Longer Manufactured | 44 | 25.0 @ CW | 1-TONE | 27.7 @ 2450 | ||
| MW7IC2425NBR1 | Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V | No Longer Manufactured | 44 | 25.0 @ CW | 1-TONE | 27.7 @ 2450 | ||
| MW7IC2725NBR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V | No Longer Manufactured | ||||||
| MW7IC2750GNR1 | HV7 2700MHZ TO270WB14G | No Longer Manufactured | ||||||
| MW7IC2750NR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 8 W Avg., 28 V | No Longer Manufactured | ||||||
| MW7IC2750NBR1 | WiMAX RF LDMOS Wideb Integrated Power Amplifier, 2500-2700 MHz, 8 W Avg., 28 V | No Longer Manufactured | ||||||
| MWE6IC9080GNR1 | GSM, GSM EDGE RF LDMOS Wideb Integrated Power Amplifier, 865-960 MHz, 80 W CW, 28 V | No Longer Manufactured | ||||||
| MWE6IC9080NR1 | HV6E 900MHZ TO270WB14 | No Longer Manufactured | ||||||
| MWE6IC9080NBR1 | GSM, GSM EDGE RF LDMOS Wideb Integrated Power Amplifier, 865-960 MHz, 80 W CW, 28 V | No Longer Manufactured | 49.5 | 80.0 @ CW | CW | 28.5 @ 96 |